2
RF Device Data
Freescale Semiconductor
MRF8S23120HR3 MRF8S23120HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 172
μAdc)
VGS(th)
1.0
1.8
2.5
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 800 mAdc, Measured in Functional Test)
VGS(Q)
1.8
2.6
3.3
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1.72Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 800 mA, Pout
= 28 W Avg., f = 2300 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
14.5
16.0
17.5
dB
Drain Efficiency
ηD
29.0
31.9
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.1
?
dB
Adjacent Channel Power Ratio
ACPR
?
--37.1
--35.0
dBc
Input Return Loss
IRL
?
-- 1 2
-- 7
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 800 mA, Pout
=28WAvg.,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz
16.0
31.9
6.1
--37.1
-- 1 2
2350 MHz
16.3
30.9
6.4
--37.9
-- 1 9
2400 MHz
16.6
31.2
6.3
--37.5
-- 1 8
1. Part internally matched both on input and output.
(continued)
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